Caltech Nanofabrication Group

  • Increase font size
  • Default font size
  • Decrease font size
Home Research

Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

Research Area: Nanofabrication Year: 2011
Type of Publication: Article Keywords: quantum dots, nanolithography, nanocrystals, oxidation
Authors: K. H. Chen; C. Y. Chien; Wei-Ting Lai; T. George; Axel Scherer; P. -W. Li
Journal: Crystal Growth & Design Volume: 11
Number: 7 Pages: 3222-3226
Month: July
Abstract:
Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO(2)/Si(3)N(4) substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.
Full text:
PDF: Caltech only

Contact

Administrative and Financial Contact

Kate Finigan
MC 200-79, Caltech
1200 E California Blvd
Pasadena, CA 91125

Office:  215 Powell-Booth
Phone:  626.395.4585
Fax: 626.577.8442
Email: kate@caltech.edu

Login