|Type of Publication:||Article||Keywords:||photonic crystal, semiconductor laser, quantum dot, quality factor|
|Authors:||J. Hendrickson; B. C. Richards; J. Sweet; S. Mosor; C. Christenson; D. Lam; G. Khitrova; H. M. Gibbs; Tomoyuki Yoshie; Axel Scherer; O. B. Shchekin; D. G. Deppe|
|Journal:||Physical Review B||Volume:||72|
Emission linewidths of quantum dot photonic-crystal-slab nanocavities are measured as a function of temperature and fabrication parameters with low-power and high-power, cw and pulsed, nonresonant excitation. The cavity linewidth is dominated by the absorption of the ensemble of quantum dots having a density of ≅400∕μm2; above the absorption edge, the cavity linewidth broadens considerably compared with the empty cavity linewidth. Gain and lasing are seen for high-power pumping; it is estimated that only a small number of quantum dots contributes to the lasing.
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