Caltech Nanofabrication Group

  • Increase font size
  • Default font size
  • Decrease font size
Home Research Nanofabrication

Fabrication of Small Laterally Patterned Multiple Quantum Wells

Research Area: Nanofabrication Year: 1986
Type of Publication: Article Keywords: quantum well structures, fabrication, gallium arsenides, aluminium arsenides, etching, ion collisions, lithography, electron microscopy, boron chlorides, argon
Authors: Axel Scherer; H. G. Craighead
Journal: Applied Physics Letters Volume: 49
Number: 19 Pages: 1284-1286
Month: November
A technique of high voltage electron beam lithography and BCl3/Ar reactive ion etching for laterally patterning GaAs/Al0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
Full text:


Administrative and Financial Contact

Kate Finigan
MC 200-36, Caltech
1200 E California Blvd
Pasadena, CA 91125

Office:  212 Sloan Annex
Phone:  626.395.4585
Fax: 626.577.8442