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Three-Dimensional Etching of Silicon for the Fabrication of Low-Dimensional and Suspended Devices

Research Area: Nanofabrication Year: 2012
Type of Publication: Article Keywords: plasma etching, ICP-RIE, scalloping, nanostructures, three-dimensional etching, undercut, suspended devices, quantum dots, self-alignment, bandgap engineering,
Authors: Sameer Walavalkar; Andrew Homyk; David Henry; Axel Scherer
Journal: Nanoscale Volume: Advanced online
Month: December
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without the reliance on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical transistors and ultra-high-aspect ratio structures. We believe that this etching technique will have broad and significant impacts and applications to nano-photonics, bio-sensing, and nano-electronics.
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