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Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

Research Area: Nanofabrication Year: 2011
Type of Publication: Article Keywords: quantum dots, nanolithography, nanocrystals, oxidation
Authors: K. H. Chen; C. Y. Chien; Wei-Ting Lai; T. George; Axel Scherer; P. -W. Li
Journal: Crystal Growth & Design Volume: 11
Number: 7 Pages: 3222-3226
Month: July
Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO(2)/Si(3)N(4) substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.
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