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Size Tunable Visible and Near-Infrared Photoluminescence from Vertically Etched Silicon Quantum Dots

Research Area: Nanophotonics Year: 2011
Type of Publication: Article Keywords: elemental semiconductors, etching, lithography, oxidation, photoluminescence, semiconductor growth, semiconductor quantum dots, silicon
Authors: Sameer Walavalkar; Andrew Homyk; C. E. Hofmann; David Henry; C. Shin; H. A. Atwater; Axel Scherer
Journal: Applied Physics Letters Volume: 98
Number: 15 Pages: 153114
Month: April
Corrugated etching techniques were used to fabricate size-tunable silicon quantum dots that luminesce under photoexcitation, tunable over the visible and near infrared. By using the fidelity of lithographic patterning and strain limited, self-terminating oxidation, uniform arrays of pillar containing stacked quantum dots as small as 2 nm were patterned. Furthermore, an array of pillars, with multiple similar sized quantum dots on each pillar, was fabricated and tested. The photoluminescence displayed a multiple, closely peaked emission spectra corresponding to quantum dots with a narrow size distribution. Similar structures can provide quantum confinement effects for future nanophotonic and nanoelectronic devices.
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