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Controllable Deformation of Silicon Nanowires with Strain up to 24%

Research Area: Nanofabrication Year: 2010
Type of Publication: Article Keywords: electron beam effects, elemental semiconductors, internal stresses, nanofabrication, nanowires, plastic deformation, polymers, semiconductor growth, silicon
Authors: Sameer Walavalkar; Andrew Homyk; David Henry; Axel Scherer
Journal: Journal of Applied Physics Volume: 107
Number: 12 Pages: 124314
Month: June
Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires. This technique is demonstrated on multiple nanowire configurations, which undergo deformation without noticeable macroscopic damage after the polymer is removed. Calculations estimate a maximum of nearly 24% strain induced in 30 nm diameter pillars. The use of an electron activated polymer allows retention of the strained configuration without any external input. As a further illustration of this technique, we demonstrate nanoscale tweezing by capturing 300 nm alumina beads using circular arrays of these silicon nanowires.
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