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Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Research Area: Nanofabrication Year: 1993
Type of Publication: Article Keywords: Hall-effect, non-volatile storage, magnetization, hysteresis, ferromagnetic
Authors: J. De Boeck; T. Sands; J. P. Harbison; Axel Scherer; H. L. Gilchrist; T. L. Cheeks; M. Tanaka; V. G. Keramidas
Journal: Electronics Letters Volume: 29
Number: 4 Pages: 421-423
Month: February
Hall-effect structures with submicrometer linewidths (ilms of Mn0.60Al0.40 which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remnant magnetization and an extraordinary Hall effect with square hysteretic behavior. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, non-volatile storage of digital information.
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