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MBE Regrowth of AlGaAs on Ion Etched GaAs/AlGaAs Microstructures

Research Area: Nanofabrication Year: 1988
Type of Publication: In Proceedings Keywords: ion beam assisted etching, IBAE, molecular beam epitaxy MBE, regrowth, heterostructure
Authors: J. P. Harbison; Axel Scherer; D. M. Hwang; L. Nazar; E. D. Beebe
Editor: unk Volume: 126
Series: Materials Research Society Symposium
Abstract:
The combination of an ion beam assisted etching (IBAE) system and a Molecular Beam Epitaxy (MBE) growth chamber integrally connected in the same set of ultrahigh vacuum (UHV) chambers has allowed us to etch patterns defined by stromtium fluoride mask down into the underlying semiconductor wafer, and regrow monocrystalline material around these patterned structures entirely in situ. Scanning electron microscopy (SEM) analysis of the regrown structures reveals very directional deposition of the overgrown material. Cross-sectional transmission electron microscopy (TEM) reveals a smooth interface and vertical sidewalls at the boundary between the etched surfaces and the overgrowth. Material deposited on the sidewalls is shown to be monocrystalline, while that deposited over the mask is polycrystalline. The SrF2 mask material, previously shown to be an excellent IBAE mask for extremely fine nanostructures, is also shown to be compatible with the high temperatures needed for overgrowth, and regrowth around structures as small as ~200nm in size has been demonstrated.

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