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Lateral Patterning of Quantum Well Structures through Compositional Mixing

Research Area: Nanofabrication Year: 1987
Type of Publication: In Proceedings Keywords: ion implantation, compositional disorder, characterization
Authors: E. A. Dobisz; H. G. Craighead; S. A. Schwartz; P. S. D. Lin; K. Kash; L. M. Schiavone; Axel Scherer; J. P. Harbison
Editor: unk Volume: 797
Series: Proceedings of SPIE Pages: 194-202
Abstract:
Impurity and crystal defect induced compositional disordering of GaAs/AlxGa1-xAs layered structures offers new microfabrication possibilities. By ion implantation one can control the location of the mixed region and control the degree of mixing. Specimens in this study were implanted with aluminum or silicon at energies and doses to give similar implanted-ion profiles. These were examined by cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and cathodoluminescence. The samples implanted with Al were found to partially disorder at a depth centered around the maximum damage peak. Silicon was found to disorder the material more completely than Al, and the disordered region extended to a depth greater than two times the projectile range. The effects of different annealing conditions on the disordering are discussed. We also implanted samples through high resolution ion masks and studied the disorder profile by TEM. The study revealed that the lateral disorder front follows that expected from the straggle of implanted ions. The feasibility of patterning with lateral resolution better than 30nm is demonstrated. We have observed structure in spatially resolved cathodoluminescence, which we believe to arise from reduced dimensionality laterally patterned quantum wells.
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