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Ion Etching of Ultranarrow Structures

Research Area: Nanofabrication Year: 1990
Type of Publication: In Proceedings Keywords: PMMA, ultranarrow, nanostructure, ion beam, electron beam lithography, CAIBE
Authors: Axel Scherer; B. P. Van der Gaag
Editor: H. G. Craighead, J. M. Gibson Volume: 1284
Series: Proceedings of SPIE Pages: 149-160
Abstract:
We describe the use of Polymethylmethacrylate as both electron beam sensitive resist and ion etchmask for high-resolution pattern transfer. By using high-resolution electron beam lithography,chemically assisted ion beam etching, and in-situ metallization, we have fabricated ultra-narrowgates with lateral dimensions below 20 nm, spaced with
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