Caltech Nanofabrication Group

  • Increase font size
  • Default font size
  • Decrease font size
Home Research Nanofabrication

Ion Damage Studies in GaAs-AlGaAs Ultra-Narrow Wires

Research Area: Nanofabrication Year: 1989
Type of Publication: In Proceedings Keywords: Ion damage, 2DEG, mobility, conduction
Authors: T. L. Cheeks; M. L. Roukes; Axel Scherer; B. P. Van der Gaag; H. G. Craighead
Editor: unk. Volume: 144
Series: Materials Research Society Symposium Proceedings
Low energy ion damage effects have been investigated in GaAs-AlGaAs two dimensional electron gas (2DEG) materials. The effect of ion mass (He, Ar, Xe) and absorbed Cl2 on the charge carrier density and mobility has been studied for ion bombarded 2DEG systems. The 2DEG mobility was significantly reduced by ion damage with the effect becoming more dramatic with smaller ion mass. For the same treatment, the two dimensional carrier density was relatively unaffected. The results of He ion exposure showed serious degradation of the 2DEG with moderate ion dose. Electrical measurements were performed to determine the conducting widths of narrow patterned wires. For the same structural widths (mask width) He defined wires showed smaller electrical widths than Ar milling in the presence of chlorine. Serious limitations to patterning small structures may be imposed using beam processes that include He or other light mass species.


Administrative and Financial Contact

Kate Finigan
MC 200-36, Caltech
1200 E California Blvd
Pasadena, CA 91125

Office:  212 Sloan Annex
Phone:  626.395.4585
Fax: 626.577.8442