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Ion Beam Assisted Etching of Indium Containing Compound Semiconductors

Research Area: Nanofabrication Year: 1988
Type of Publication: In Proceedings Keywords: ion beam assisted etching, IBAE, etch damage
Authors: Axel Scherer; P. Grabbe; K. Kash; P. S. D. Lin; H. G. Craighead; B. P. Van der Gaag
Volume: 17
Book title: unk Number: 4
Series: Journal of Electronic Materials Pages: S17
Abstract:
Sub-100nm structures with aspect ratios in excess of 5:1 were generated in InP, InGaAsP, InGaAs, InAlAs and heterostructure combinations using ion beam assisted etching (IBAE). These small features were fabricated using an Ar ion beam with iodine monochloride and chlorine reactive gas jets directed at a heated sample. The effects of the sample temperature, the ion voltage and the gas chemistry on the etch rates as well as the directionality of the etch were investigated. At low substrate temperatures, good quality etch results could be obtained through iodine monochloride additions to the chlorine jet, whereas these were no longer necessary above 400K.

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