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InGaAsP Photonic Band Gap Crystal Membrane Microresonators

Research Area: Nanophotonics Year: 1998
Type of Publication: Article Keywords: photonic band gap, indium compounds, gallium arsenide, III-V semiconductors, optical resonators, micromechanical resonators, semiconductor quantum wells, optical switches, finite difference time-domain analysis, integrated optics, photoluminescence, mirr
Authors: Scherer, Axel; Painter, Oskar; D'Urso, B.; Lee, R. K.; Yariv, A.
Journal: Journal of Vacuum Science and Technology B Volume: 16
Number: 6 Pages: 3906-3910
Month: November
We have microfabricated two-dimensional (2D) photonic band gap structures in a thin slab of dielectric material to define reflectors and high-Q microresonators. By selectively omitting holes from the 2D photonic crystal, optical microcavities, and in-plane microresonator switches can be defined. We have designed this structure with a finite difference time domain approach, and demonstrate the effect of lithographic 2D band gap tuning on the emission spectra of InGaAs/InGaAsP multiple quantum well material emission wavelength of 1.55 µm.
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