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Hybrid Single Quantum Well InP/Si Nanobeam Lasers for Silicon Photonics

Research Area: Nanophotonics Year: 2013
Type of Publication: Article Keywords: Nanolaser, silicon photonics, photonic crystal, nanobeam, ultralow threshold, wafer bonding, quantum well, integrated photonics
Authors: Fegadolli, William; Kim, Se-Heon; Postigo, P. A.; Scherer, Axel
Journal: Optics Letters Volume: 38
Number: 22 Pages: 4656-4658
Month: November
Abstract:
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578nm with a low threshold power of ~14.7uW. Laser gain is provided from a single InAsP quantum well embedded in a 155nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(lambda/n)^3 is a promising and efficient light source for silicon photonics.
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