Caltech Nanofabrication Group

  • Increase font size
  • Default font size
  • Decrease font size
Home Publications

Coulomb Blockade in Vertical, Bandgap Engineered Silicon Nanopillars

Research Area: Nanofabrication Year: 2013
Type of Publication: Article Keywords: nanofabrication, silicon nanopillar, quantum confinement, coulomb blockade, single electron device, tunneling device, bandgap engineering
Authors: Walavalkar, Sameer; Latawiec, Pawel; Scherer, Axel
Journal: Applied Physics Letters Volume: 102
Number: 18 Pages: 183101
Month: May
Abstract:
Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.
Full text:
PDF: Caltech only
Online version (publisher)

Contact

Administrative and Financial Contact

Kate Finigan
MC 200-79, Caltech
1200 E California Blvd
Pasadena, CA 91125

Office:  215 Powell-Booth
Phone:  626.395.4585
Fax: 626.577.8442
Email: kate@caltech.edu

Login