|Type of Publication:||Article||Keywords:||nanofabrication, silicon nanopillar, quantum confinement, coulomb blockade, single electron device, tunneling device, bandgap engineering|
|Authors:||Walavalkar, Sameer; Latawiec, Pawel; Scherer, Axel|
|Journal:||Applied Physics Letters||Volume:||102|
Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.
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