|Type of Publication:||Article||Keywords:||photonic crystal, laser, nanopillars, GaAs,|
|Authors:||Scofield, A. C.; Kim, Se-Heon; Shapiro, J. N.; Lin, A.; Liang, B. L.; Scherer, Axel; Huffaker, D. L.|
The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of similar to 625 W/cm(2). Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.
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