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GaAs Photonic Crystal Slab Nanocavities: Growth, Fabrication, and Quality Factor

Research Area: Nanophotonics Year: 2010
Type of Publication: Article Keywords: Nanostructure fabrication; Microcavities; Photonic crystals; Integrated optics devices; Photonic integrated circuits
Authors: Sweet, J.; Richards, B. C.; Olitzky, J. D.; Hendrickson, J.; Khitrova, G.; Gibbs, H. M.; Litvinov, D.; Gerthsen, D.; Hu, D. Z.; Schaadt, D. M.; Wegener, M.; Khankhoje, Uday; Scherer, Axel
Journal: Photonics and Nanostructures - Fundamentals and Applications Volume: 8
Number: 1 Pages: 1-6
Month: January
In an effort to understand why short wavelength (not, vert, similar1000 nm) GaAs-based photonic crystal slab nanocavities have much lower quality factors (Q) than predicted (and observed in Si), many samples were grown, fabricated into nanocavities, and studied by atomic force, transmission electron, and scanning electron microscopy as well as optical spectroscopy. The top surface of the AlGaAs sacrificial layer can be rough even when the top of the slab is smooth; growth conditions are reported that reduce the AlGaAs roughness by an order of magnitude, but this had little effect on Q. The removal of the sacrificial layer by hydrogen fluoride can leave behind a residue; potassium hydroxide completely removes the residue, resulting in higher Qs.
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