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Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes

Research Area: Nanophotonics Year: 2000
Type of Publication: Article Keywords: aluminium compounds, indium compounds, gallium arsenide, gallium compounds, III-V semiconductors, surface recombination, photoluminescence, light emitting diodes, nanostructured materials, photonic band gap
Authors: Boroditsky, M.; Gontijo, I.; Jackson, M.; Vrijen, R.; Yablonovitch, E.; Krauss, Thomas; Cheng, Chuan-Cheng; Scherer, Axel; Bhat, R. J.; Krames, M.
Journal: Journal of Applied Physics Volume: 87
Number: 7 Pages: 3497-3504
Month: April
Abstract:
Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes.
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