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Photodetection in Silicon Beyond the Band Edge with Surface States

Research Area: Nanophotonics Year: 2008
Type of Publication: Article Keywords: detectors, silicon, modulation, integrated optics, guided waves, integrated optics devices, detectors
Authors: Baehr-Jones, Tom; Hochberg, Michael; Scherer, Axel
Journal: Optics Express Volume: 16
Number: 3 Pages: 1659-1668
Month: February
Abstract:
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on the generation of free carriers in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The photoconductive effect is shown to have minimal falloff at speeds of up to 60 Mhz.
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