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Organic Field-Effect Transistors with Nonlithographically Defined Submicrometer Channel Length

Research Area: Nanophotonics Year: 2004
Type of Publication: Article Keywords: Organic FET, transistor, polymer, mobility, underetch, self-aligned, buried gate
Authors: Scheinert, S.; Doll, T.; Scherer, Axel; Paasch, G.; Horselmann, I.
Journal: Applied Physics Letters Volume: 84
Number: 22 Pages: 4427-4429
Month: May
We developed an underetching technique to define submicrometer channel length polymer field-effect transistors. Short-channel effects are avoided by using thin silicon dioxide as gate insulator. The transistors with 1 and 0.74 µm channel length operate at a voltage as low as 5 V with a low inverse subthreshold slope of 0.4–0.5 V/dec, on–off ratio of 104, and without short-channel effects. The poly(3-alcylthiophene)'s still suffer from a low mobility and hysteresis does occur, but it is negligible for the drain voltage variation. With our underetching technique also device structures with self-aligned buried gate and channel length below 0.4 µm are fabricated on polymer substrates.
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