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Monolithic Hemispherical Microlenses Fabricated by Selective Oxidation of AlGaAs

Research Area: Nanophotonics Year: 1998
Type of Publication: In Proceedings Keywords: semiconductor laser, Schottky barrier diode, electrostatic current confinement, MESFET
Authors: Xu, Y.; Cheng, Chuan-Cheng; Lee, R. K.; O'Brien, J. D.; Yariv, A.; Scherer, Axel
Editor: E. F. Schubert Volume: 3279
Series: SPIE, Light-Emitting Diodes: Research, Manufacturing and Applications II Pages: 172
Month: January
We have developed a new method for the fabrication of monolithic AlGaAs microlenses on the surface of GaAs/AlGaAs light emitting diodes by combing crystal growth, ion etching and steam oxidation with wet chemical removal of the oxide. Control over the precise processing parameters has resulted in the precise control over the shape, radius, position and smoothness of the microfabricated hemispheres. These microlenses can readily be used for the fabrication of highly efficient light-emitting diodes.
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