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GaAs-AlAs Monolithic Microresonator Arrays

Research Area: Nanophotonics Year: 1988
Type of Publication: In Proceedings Keywords: microresonators, molecular beam epitaxy, MBE, ion-beam assisted etching
Authors: J. L. Jewell; Axel Scherer; S. L. McCall; A. C. Gossard; J. H. English
Editor: Nasser Peyghambarian Volume: 881
Series: SPIE, Optical Computing and Nonlinear Materials Pages: 46-48
Abstract:
Monolithic optical logic devices 1.5-5um across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (factor 30 smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3um center-center spacing,
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