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Coulomb Blockade in Vertical, Bandgap Engineered Silicon Nanopillars

Research Area: Nanofabrication Year: 2013
Type of Publication: Article Keywords: nanofabrication, silicon nanopillar, quantum confinement, coulomb blockade, single electron device, tunneling device, bandgap engineering
Authors: Sameer Walavalkar; Pawel Latawiec; Axel Scherer
Journal: Applied Physics Letters Volume: 102
Number: 18 Pages: 183101
Month: May
Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.
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