|Type of Publication:||Article||Keywords:||plasma etching, ICP-RIE, scalloping, nanostructures, three-dimensional etching, undercut, suspended devices, quantum dots, self-alignment, bandgap engineering,|
|Authors:||Sameer Walavalkar; Andrew Homyk; David Henry; Axel Scherer|
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without the reliance on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical transistors and ultra-high-aspect ratio structures. We believe that this etching technique will have broad and significant impacts and applications to nano-photonics, bio-sensing, and nano-electronics.
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