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Alumina Etch Masks for Fabrication of High-Aspect-Ratio Silicon Micropillars and Nanopillars

Research Area: Nanofabrication Year: 2009
Type of Publication: Article Keywords: lithography, masks, pattern transfer, surface cleaning, etching, patterning, nanofabrication, processing, mems, nems, electronics and devices, semiconductors, nanoscale science
Authors: David Henry; Sameer Walavalkar; Andrew Homyk; Axel Scherer
Journal: Nanotechnology Volume: 20
Number: 25 Pages: 255305
Month: June
We introduce using sputtered aluminum oxide (alumina) as a resilient etch mask for fluorinated silicon reactive ion etches. Achieving selectivity of 5000:1 for cryogenic silicon etching and 68:1 for SF6/C4F8 silicon etching, we employ this mask for fabrication of high-aspect-ratio silicon micropillars and nanopillars. Nanopillars with diameters ranging from below 50 nm up to several hundred nanometers are etched to heights greater than 2 um. Micropillars of 5, 10, 20, and 50 um diameters are etched to heights of over 150 um with aspect ratios greater than 25. Processing and characterization of the sputtered alumina is also discussed.
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