Caltech Nanofabrication Group

Deeply etched 1-D third-order Bragg reflectors have been used as mirrors for broad-area semiconductor lasers operating at 975-nm wavelength. From a threshold and efficiency analysis, we determine the mirror reflectivity to be approximately 95%. The design of the GaAs-based laser structure features three InGaAs quantum wells placed close (0.5 µm) to the surface in order to reduce the required etch depth and facilitate high-quality etching. Despite the shallow design and the proximity of the guided mode to the metal contact, the threshold current density (Jth = 220 A/cm2 for infinite cavity length) and internal loss (alpha_i = 9 ± 1 cm – 1) are very low.

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