Ultra-Small Nanostructures

1.Van der Gaag BP; Scherer A, “Microfabrication below 10 nm”, APPLIED PHYSICS LETTERS 1990, vol 56, iss 5, pp 481-483.

2.Scherer A; Van der Gaag BP; “Ion etching of ultra-narrow”, SPIE, Vol. 1284, 1990, pp. 149-60.

3.Scherer A; Van der Gaag BP, “Characterization of nanostructures by reflection electron-microscopy”, APPLIED PHYSICS LETTERS 1990, vol 56, iss 25, pp 2566-2568.

4.Kash K; Bhat R; Mahoney DD; Worlock JM; Lin PSD; Scherer A; van Der Gaag BP; Koza M; Grabbe P, “Strain-induced lateral confinement of carriers in semiconductor quantum wells”, SYMPOSIUM. MATER. RES. SOC. 1989, pp.245-7.

5.Grabbe P; Scherer A; Kash K; “Photoluminescence measurement of sidewall damage in etched InGaAsp!Inp and GaAs!AlGaAS microstructures”,SYMPOSIUM. MATER. RES. SOC. 1989, pp.145-9.

6.Clausen EM Jr; Craighead HG; Harbison JP; Scherer A; Schiavone LM; Van der Gaag B; Florez Lt, “Nonradiative damage measured by cathodoluminescence in etched multiple quantum well GaAs/AlGaAs quantum dots”, JOURNAL OF VAACUM SCIENCE & TECHNOLOGY B, Vol. 7, No. 6, 1989, pp. 2011-14.

7.Scherer A; Van der Gaag B; Kash K; Craighead HG; Grabbe P, “Anisotropic ion beam assisted etchingof optical structures in GaAs and InP”, SYMPOSIUM. MATER. RES. SOC., 1988, pp. 245-50.

8.Harbison JP; Scherer A; Hwang DM; Nazar L; Beebe ED, “MBE regrowth of AlGaAs on ion etched GaAs/AlGaAs microstructres”, SYMPOSIUM. MATER. RES. SOC. 1988, pp. 11-16.

9.Kash K; Grabbe P; Nahory RE; Scherer A; Weaver A; Caneau C, “Dynamics of photoexcited carriers in micron-size InP-InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy”, APPLIED PHYSICS LETTERS 1988, vol 53, iss 22, pp 2214-2216.

10.Kash K; Worlock JM; Sturge MD; Grabbe P; Harbison JP; Scherer A; Lin PSD “Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures”, APPLIED PHYSICS LETTERS 1988, vol 53, iss 9, pp 782-784.

11.Scherer A; Grabbe P; Kash K; Lin PSD; Craighead HG; Vandergaag BP “Ion-beam assisted etching of indium containing compound semiconductors”, JOURNAL OF ELECTRONIC MATERIALS 1988, vol 17, iss 4, pp s17-s17.

12.Gozdz AS; Lin PSD; Scherer A; Lee SF “Fast direct e-beam lithographic fabrication of 1st-order gratings for 1.3-mu-m DFB lasers ELECTRONICS LETTERS 1988, vol 24, iss 2, pp 123-125.

13.Scherer A; Craighead HG; Beebe ED, “Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol.5, no.6, 1987, pp.1599-605.

14.Dobisz EA. Craighead HG. Schwarz SA. Lin PSD. Kash K. Schiavone LM. scherer A. Harbison JP. Tell, “Lateral patterning of quantum well structures through compositional mixing”, SPIE, Vol.797, 1987, pp.194-202.

15. Scherer A; Craighead HG; Beebe ED “Gallium-arsenide and aluminum gallium-arsenide reactive ion etching in boron-trichloride argon mixtures”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY b 1987, vol 5, iss 6, pp 1599-1605.

16.Scherer A; Beebe E; Craighead HG “A study of gallium-arsenide and aluminum gallium-arsenide reactive ion etching parameters”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 1987, vol 5, iss 4, pp 1604-1605.

17.Scherer A; Craighead HG “Barium fluoride and strontium fluoride negative electron-beam resists”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY b 1987, vol 5, iss 1, pp 374-378.